sf810 ? sf860 8. 0a v v 1.0 70 140 210 280 350 420 v 100 200 300 400 500 600 v 85 0 810 gl ass passivated die construction low forward voltage drop high surge current capability 8 . 0a glass passivated superfast rectifier feat ures ! ! s up e r-fast switching ! ! low reverse leakage current ! ! plastic material has ul flammability classification 94v-o m e chanical data m aximum r atings and electrical characteristics @t a =2 5 c unl ess ot herwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol unit p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rm s reverse voltage v r( rm s) a v erage rec t ified output current @t c = 100 c i o 8.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 90 a forward v oltage @i f = fm p e ak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 10 400 a revers e recovery time (note 1) t rr 35 ns typical junction capacitance (note 2) c j 8 0 50 pf operat ing and storage temperature range t j , t st g -55 t o +150 c not e: 1. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com m ou nting position: any polarity: see diagram minals: plated leads solderable per case: to-220ac, molded plastic ! ! ter mil-std-202, method 208 ! ! weight: 2.24 grams (approx.) ! ! lead free: for rohs / lead free version p i n 1 + + p i n 3 - case l m a n p d e k c b g 1 3 j h to-220ac dim min max a 14.22 15.88 b 9.57 10.57 c 2.54 3.43 d 5.80 6.80 e 6.35 g 12.70 14.73 h 4.88 5.28 j 0.51 1.14 k 3.53 4.14 l 3.56 4.83 m 1.07 1.47 n 0.30 0.64 p 2.03 2.92 all dimensions in mm 830 820 840 860 1. 3 1.7 sf810 ? sf860 sf sf sf sf sf sf
30 60 90 0 120 150 180 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 max non-repetitive surge current 8.3 ms single half-sine-wave jedec method 10 100 400 0.1 1.0 10 100 v , reverse voltage (v) fig. 4 typical junction capacitance r c , capacitance (pf) j 0.1 1.0 10 100 0.2 0.6 1.0 1.4 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f pulse width = 300 s 2% duty cycle m 850-860 830-840 810-820 2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com 0 2 4 6 8 10 0 50 100 150 i , average forward current (a) (a v) t , case temperature ( c) fig. 1 forward current derating curve c sf810 ? sf860 sf810 ? sf860 810-820 830-860
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